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| Preliminary data BSS84PW SIPMOS (R) Small-Signal-Transistor Features * P-Channel Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current * Enhancement mode VDS RDS(on) ID 3 -60 8 -0.15 V * Avalanche rated * Logic Level * dv/dt rated W A 2 1 VSO05561 Type BSS84PW Package SOT-323 Ordering Code Q67042-S4028 Marking YBs Pin 1 G PIN 2 S PIN 3 D Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Continuous drain current Value -0.15 -0.6 2.61 0.03 6 Unit A ID ID puls EAS EAR dv/dt T A = 25 C Pulsed drain current T A = 25 C Avalanche energy, single pulse I D = -0.15 A , V DD = -25 V, RGS = 25 W Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt mJ kV/s I S = -0.15 A, V DS = -48 V, di/dt = 200 A/s, T jmax = 150 C Gate source voltage Power dissipation VGS Ptot Tj , Tstg 20 0.3 -55...+150 55/150/56 V W C T A = 25 C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2000-04-14 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 3) SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. Values typ. - BSS84PW Unit max. 110 K/W RthJS RthJA - - - 420 350 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage Symbol min. Values typ. -1.5 max. -2 A -0.1 -10 -10 10.5 6.9 4.6 -1 -100 -100 25 12 8 nA V Unit V(BR)DSS VGS(th) IDSS -60 -1 VGS = 0 V, I D = -250 A Gate threshold voltage, VGS = VDS I D = -20 A Zero gate voltage drain current VDS = -60 V, V GS = 0 V, T j = 25 C VDS = -60 V, V GS = 0 V, T j = 125 C Gate-source leakage current IGSS RDS(on) RDS(on) RDS(on) VGS = -20 V, VDS = 0 V Drain-source on-state resistance W VGS = -2.7 V, I D = -0.01 A Drain-source on-state resistance VGS = -4.5 V, I D = -0.12 A Drain-source on-state resistance VGS = -10 V, ID = -0.15 A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2000-04-14 Preliminary data Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol Conditions min. Values typ. 0.16 15.3 5.8 3 6.7 16.2 8.6 20.5 BSS84PW Unit max. 19.1 7.3 3.8 10 24.3 12.9 30.8 ns S pF g fs Ciss Coss Crss t d(on) tr t d(off) tf V DS2*ID*R DS(on)max , ID=0.15A V GS=0V, VDS=-25V, f=1MHz 0.08 - V DD=-30V, V GS=-4.5V, ID=-0.12A, RG=25W Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Q gs Q gd Qg V DD=-48V, I D=-0.15A - 0.25 0.3 1 -3.4 0.38 0.45 1.5 - nC V DD=-48V, I D=-0.15A, V GS=0 to -10V V(plateau) V DD=-48V, ID=-0.15A V IS I SM VSD t rr Q rr T A=25C - -0.84 23.6 11.6 -0.15 A -0.6 -1.12 V 35.4 17.4 ns nC V GS=0V, IF=-0.15A V R=-30V, I F=l S, diF/dt=100A/s - Page 3 2000-04-14 Preliminary data Power Dissipation Drain current BSS84PW Ptot = f (TA) BSS84PW ID = f (TA ) parameter: VGS BSS84PW 10 V 0.32 -0.16 W A 0.24 -0.12 Ptot 0.16 ID 20 40 60 80 100 120 0.20 -0.10 -0.08 0.12 -0.06 0.08 -0.04 0.04 -0.02 0.00 0 C 160 0.00 0 20 40 60 80 100 120 C 160 TA TA Safe operating area Transient thermal impedance I D = f ( V DS ) parameter : D = 0 , T A = 25 C -10 1 BSS84PW ZthJA = f (tp ) parameter : D = tp /T 10 3 BSS84PW A K/W -10 0 tp = 40.0s Z thJC 100 s 10 2 ID /I D -10 -1 = V DS 1 ms RD S( on ) 10 ms D = 0.50 0.20 10 1 0.10 0.05 0.02 single pulse -10 -2 DC 0.01 -10 -3 -1 -10 -10 0 -10 1 V -10 2 10 0 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 1 s 10 3 VDS Page 4 tp 2000-04-14 Preliminary data Typ. output characteristic BSS84PW Typ. drain-source-on-resistance I D = f (VDS); T j=25C parameter: tp = 80 s BSS84PW RDS(on) = f (ID ) parameter: VGS BSS84PW -0.36 Ptot = 0W gf VGS [V] a -2.5 b -3.0 -3.5 -4.0 -4.5 -5.0 -6.0 A -0.28 W e 26 a b c d 22 20 d c d e f RDS(on) 18 16 14 12 10 -0.24 ID -0.20 -0.16 -0.12 -0.08 -0.04 a b c g 8 6 4 2 -5.0 VGS [V] = a b c d e f -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 g -6.0 e g f 0.00 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V 0 0.00 -0.04 -0.08 -0.12 -0.16 -0.20 -0.24 A -0.30 VDS ID Typ. transfer characteristics I D= f ( V GS ) VDS 2 x I D x RDS(on)max parameter: tp = 80 s -0.30 Typ. forward transconductance gfs = f(ID ); Tj=25C parameter: gfs 0.22 S A 0.18 0.16 gfs V -5.0 VGS ID -0.20 0.14 0.12 -0.15 0.10 0.08 0.06 -0.05 0.04 0.02 0.00 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 0.00 0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 -0.10 A -0.40 ID Page 5 2000-04-14 Preliminary data Drain-source on-resistance Gate threshold voltage BSS84PW RDS(on) = f(Tj) parameter: ID = -0.17A, V GS = -10 V 16 VGS(th) = f (Tj) parameter: VGS = VDS , ID = -20 A -2.5 W V max. 10 max. V GS(th) RDS(on) 12 -1.5 typ. 8 -1.0 typ. min. 6 4 -0.5 2 0 -60 -20 20 60 100 160 C Tj 0.0 -60 -20 20 60 100 C 180 Tj Typ. capacitances C = f(VDS) Parameter: VGS=0 V, f=1 MHz 10 2 Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 s -10 0 BSS84PW A pF Ciss -10 -1 C 10 1 Coss Crss IF -10 -2 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 -10 -3 0.0 -5 -10 -15 -20 V -30 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VDS VSD Page 6 2000-04-14 Preliminary data Avalanche energy Typ. gate charge BSS84PW EAS = f (Tj) 3.0 par.: ID = -0.15 A , VDD = -25 V, R GS = 25 W VGS = f (QGate ) parameter: ID = -0.15 A pulsed BSS84PW -16 V mJ -12 E AS 2.0 VGS -10 0,2 VDS max 0,8 VDS max 1.5 -8 -6 1.0 -4 0.5 -2 0.0 25 45 65 85 105 125 C 165 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 nC 1.5 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) BSS84PW -72 V V(BR)DSS -68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 C 180 Tj Page 7 2000-04-14 Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. BSS84PW Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2000-04-14 |
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